氮化硅陶瓷

氮化硅陶瓷具有硬度大、强度高、热膨胀系数小高温蠕变小、抗氧化性能好、热腐蚀性能好、摩擦系数小等诸多优异性能，是综合性能好的结构陶瓷材料。单晶氮化硅的理论热导率可达400w/(m·K)，具有成为高导热基片的潜力。此外，氮化硅的线膨胀系数与Si、SiC和GaAs等半导体材料匹配良好，这使氮化硅陶瓷成为一种极具有吸引力的高强高导热电子器件基板材料。

Silicon nitride ceramics have many excellent properties such as high hardness high strength, low coefficient of thermal expansion, low high-temperature creep. good oxidation resistance, good thermal corrosion resistance, and low friction coefficient. They are the most comprehensive structural ceramic materials. The theoretical thermal conductivity of single crystal silicon nitride can reach 400 w/(m · K), which has the potential to become a high thermal conductivity substrate.In addition, the coefficient of linear expansion of silicon nitride matches well with semiconductor materials such as Si, SiC, and GaAs, making silicon nitride ceramics an extremely attractive substrate material for high-strength and high thermal conductivity electronic devices.